vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 1 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 40 a features ? 150 c max. operating junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec-jesd47 ? material categorization: ? for definitions of co mpliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-40epf0... fast soft reco very rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-247ac modified (2 pins) i f(av) 40 a v r 200 v, 400 v, 600 v v f at i f 1.25 v i fsm 475 a t rr 60 ns t j max. 150 c diode variation single die snap factor 0.5 cathode base cathode anode 1 3 2 to-247ac modified available major ratings and characteristics symbol characteristics values units i f(av) sinusoidal wa veform 40 a v rrm 200 to 600 v i fsm 475 a v f 10 a, t j = 25 c 1 v t rr 1 a, - 100 a/s 60 ns t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-40epf02pbf, vs-40epf02-m3 200 300 8 vs-40epf04pbf, vs-40epf04-m3 400 500 vs-40epf06pbf, VS-40EPF06-M3 600 700 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 40 a maximum peak one cycle ? non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 400 10 ms sine pulse, no voltage reapplied 475 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 800 a 2 s 10 ms sine pulse, no voltage reapplied 1131 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 a 2 ? s
vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 2 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 40 a, t j = 25 c 1.25 v forward slope resistance r t t j = 150 c 4.4 m ? threshold voltage v f(to) 1.1 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 8.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 40 a pk ? 25 a/s ? 25 c 180 ns reverse recovery current i rr 3.2 a reverse recovery charge q rr 0.5 c snap factor s 0.5 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg - 40 to 150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.6 c/w maximum thermal resistance, ? junction to ambient r thja 40 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac modified (jedec) 40epf02 40epf04 40epf06
vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 3 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non- repetitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 5 100 10 45 120 130 110 15 25 140 35 20 conduction angle 40epf.. series r thjc (dc) = 0.6 k/w 90 30 60 90 120 180 40 30 ? 150 030 maximum allowable case temperature (c) average forward current (a) 50 110 70 120 10 20 130 140 40epf.. series r thjc (dc) = 0.6 k/w ? conduction period 30 60 90 120 180 dc 100 90 60 40 10 0 60 0 maximum average forward power loss (w) average forward current (a) 25 40 40 50 30 10 15 5 20 conduction angle 40epf.. series t j = 150 c rms limit 180 120 90 60 30 30 20 35 ? 10 0 80 0 maximum average forward power loss (w) average forward current (a) 40 70 20 10 30 30 60 20 50 70 50 rms limit ? conduction period 40epf.. series t j = 150 c 180 120 90 60 30 dc 60 40 450 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 40epf.. series 350 300 400 150 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 400 500 1 40epf.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 350 450
vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 4 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 024 instantaneous forward current (a) instantaneous forward voltage (v) 100 6 13 t j = 25 c t j = 150 c 40epf.. series 5 225 25 0 40 120 200 t rr - typical reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 125 75 200 160 150 100 50 175 80 40epf.. series t j = 25 c i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0 0 80 120 160 200 t rr - typical reverse recovery time (ns) di/dt - rate of fall of forward current (a/s) 0.4 0.6 0.2 0.8 40epf.. series t j = 150 c 40 i fm = 80 a i fm = 5 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 1 a 0 0 80 120 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 160 40epf.. series t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 40 i fm = 40 a 0 0 80 120 160 200 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 6 8 10 40epf.. series t j = 150 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 40 i fm = 40 a
vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 5 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery curre nt characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 80 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 10 20 5 15 40epf.. series t j = 25 c i fm = 80 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 40 i fm = 40 a 50 20 0 0 40 120 160 200 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 40 10 30 40epf.. series t j = 150 c 80 i fm = 80 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0.01 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 1 single pulse 40epf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 1
vs-40epf0.pbf series, vs-40epf0.-m3 series www.vishay.com vishay semiconductors revision: 18-jun-13 6 document number: 94102 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-40epf02pbf 25 500 antistatic plastic tubes vs-40epf02-m3 25 500 antist atic plastic tubes vs-40epf04pbf 25 500 antistatic plastic tubes vs-40epf04-m3 25 500 antist atic plastic tubes vs-40epf06pbf 25 500 antistatic plastic tubes VS-40EPF06-M3 25 500 antist atic plastic tubes links to related documents dimensions www.vishay.com/doc?95253 part marking information to-247ac modified pbf www.vishay.com/doc?95255 to-247ac modified -m3 www.vishay.com/doc?95442 spice model www.vishay.com/doc?95274 2 - current rating (40 = 40 a) 1 - vishay semiconductors product 3 - circuit configuration: e = single diode 4 - package: p = to-247ac modified 5 - type of silicon: - environmental digit: f = fast diode 6 - voltage code x 100 = v rrm 7 pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 02 = 200 v 04 = 400 v 06 = 600 v device code 5 1 3 2 4 6 7 40 vs- e p f 06 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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